| PART |
Description |
Maker |
| K9F5608U0M-YCB0 K9F5608U0M-YIB0 |
32M x 8 Bit NAND Flash Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YI |
32M x 8 Bit NAND Flash Memory
|
Samsung Electronic
Samsung semiconductor
|
| K9F8008W0M- K9F8008W0M-TCB0 K9F8008W0M-TIB0 K9K120 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
1M x 8 bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K9F5608U0A |
32M x 8 Bit NAND Flash Memory Data sheet
|
Samsung Electronic
|
| K9F1208D0A K9F1208U0A K9F1216U0A |
(K9F1208x0A / K9F1216x0A) 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
|
Samsung semiconductor
|
| MX29LV320ABXEI-90G MX29LV320ATXEI-90G MX29LV320ABT |
32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY 2M X 16 FLASH 3V PROM, 90 ns, PBGA48
32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY 2M X 16 FLASH 3V PROM, 70 ns, PBGA48
32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Macronix International Co., Ltd.
|
| MBM29DL323BE-12TR MBM29DL324TE-12TR MBM29DL324BE-1 |
FLASH MEMORY 32M (4M x 8/2M x 16) BIT Dual Operation
Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation
|
Fujitsu Microelectronics
|
| K5T6432YT K5T6432YTM-T310 |
64Mbit (4Mx16) four bank NOR flash memory / 32Mbit (2Mx16) UtRAM, 100ns
Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MBM29F033C-90 MBM29F033C-90PTN MBM29F033C-90PTR MB |
FLASH MEMORY 32M (4M x 8) BIT
|
Fujitsu Microelectronics
|
| MX29LV320ETTI70G MX29LV320ETXBI70G MX29LV320EBXBI7 |
32M-BIT [4M x 8 / 2M x 16] 3V SUPPLY FLASH MEMORY
|
Macronix International
|
| W25Q32BV |
3V 32M-BIT SERIAL FLASH MEMORY
|
Winbond
|
